June 1, 2007
Group4 Announces thickest wafers yet: 100-microns
Dear Customers and Development Partners,
Once again, Cornell University engineers led by Professor Lester F. Eastman have taken GaN-on-Diamond FET devices up to record heights.
In a soon-to-be-released publication, the Ft of a GaN-on-Diamond FET is measured to be 53 GHz – the highest frequency yet measured on the novel material. The authors of the work do not believe it is the maximum figure attainable by GaN-on-Diamond. The Ft of a transistor represents the maximum frequency beyond which there is no further gain in the transistor.
In recent weeks, Group4 Labs published a demonstration of the thickest GaN FET-on-Diamond wafers yet: 100-microns. The 2” wafers have been fully described in GaN HEMT-on-Diamond Substrates for X-Band applications* in Conference Digest of Papers, CS ManTech Conference, 2007. At 90±10-microns, the wafers – now sturdier and flatter than earlier wafers – represent the company’s new thickness standard. All 2” wafers shipped heretofore shall be 90±10-microns or more. The CS ManTech paper also showcases progress made towards a 4” GaN FET-on-Diamond wafer.
Please stay tuned for more updates in the months to come.
Warm Regards,
Felix Ejeckam
CEO
* PDF downloads |
