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October 1, 2009
Multiple Partners Demo High-performing Transistors
Dear Customers and Development Partners,
As we round out the year, we are pleased to announce that several of our development partners and customers are reporting High Electron Mobility Transistor efficiencies of about 60% with a peak power of 5 W/mm at X-band (10GHz). The authors point out that device performance is generally limited by device architecture and chip process quality. Additionally, the devices show a clearly reduced junction temperature when compared to similar GaN-on-SiC devices.
The company’s efforts are now focused on go-to-market activities; wafers are expected to be marketed and sold to customers in early 2010.
It’s the end of the year, and we thank all of our customers, development partners, suppliers, and our lone outside strategic investor.
Warm Regards,
Felix Ejeckam
CEO
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