|
|
|
|
 |
 |
October 1, 2010
More Diamond Options
Dear Customers and Development Partners,
We now sell GaN-on-Diamond HEMT epitaxial wafers with two options of Diamond substrate types. One option features a polycrystalline diamond substrate with 900 W/m-K in thermal conductivity, and the other option features a diamond with 1,200 W/m-K in thermal conductivity. The two diamond types offer respectively 2-times and 3-times greater temperature reductions in a GaN-on-Diamond transistor compared to a GaN-on-SiC transistor. SiC substrates exhibit a thermal conductivity of about 400-455 W/m-K.
Please email me at sales@group4labs.com if you want to try a sample.
Warm Regards,
Felix Ejeckam
CEO |
|
|
|
|
