October 1, 2011
5,000+ Hrs and no-failures!
Dear Customers and Development Partners,
A few weeks ago, high-electron-mobility-transistor (HEMT) devices made on our GaN-on-Diamond wafers passed 5,000 hours (just over 200 days) of high-temperature operating life tests with zero failures. Industry users consider this reliability success to be a critical and extra-ordinary achievement for a new platform material that promises to deliver to the world extreme energy efficiency.
In the on-going reliability tests, 21 GaN-on-Diamond HEMT devices were subjected to a source-drain voltage of 48V while the source-drain current was monitored for fluctuations or failures. In the test, the devices were subjected to a base-plate temperature of 175 deg-C. 5,000+ hrs later, not one device has failed or degraded appreciably. A summary graph of the results is shown below.
The results shown here represent a landmark result for a new platform that is starting to garner adoption by GaN users all over the world. At Group4 Labs, we believe that this reliability tests proves conclusively that the GaN-on-Diamond technology can be used by any commercial, consumer, industrial, or defense user keen on making cost-effective extremely energy-efficient nano-/micro-/photonic systems.
Please email me at firstname.lastname@example.org if you want to try a sample.