July 1, 2012
5,000 Hrs. 290°C. No Failures!
Dear Customers and Development Partners,
Buoyed by recent good endurance data on our GaN-on-Diamond transistors, we developed more courage. We subjected a bunch more GaN-on-Diamond and GaN-on-Silicon transistors to a constant soak junction-temperature of 290°C, and a bias of 24-48V across the source-drain. We regularly monitored the source-drain current over the past 5,000 hours.
Not one of the GaN-on-Diamond transistors failed, whereas all of the GaN-on-Silicon transistors failed. Again, a very surprising result, but we’re pleased nonetheless at the stark differences between the two materials. The tests are ongoing and we will keep you informed of developments.
Please email me at technology@group4labs.com if you have any questions whatsoever.
Warm Regards,
Felix Ejeckam
CEO |
