February 1, 2008
2” FET Wafer Products Now Completed
Dear Customers and Development Partners,
We have now completed development of a baseline product – a GaN FET-on-Diamond epitaxial wafer. After several years in development and testing, we’re beginning a year-long ramp into high-volume production.
The 50-micron thick, 2” GaN FET-on-Diamond epitaxial wafers exhibited an end-to-end GaN attachment yield of nearly 100%. The free-standing wafer-bow measures less than 400-microns on average from batch to batch in the manufacturing line. The wafer-bow measure less than 30-microns when flat-mounted on a quartz handle wafer. Most important about our wafers, there is a statistically insignificant variation from batch-to-batch in the manufacturing line. The diamond’s thickness, and power-level of the GaN epitaxy have been specifically designed for power amplifiers used in commercial cellular base-stations, WiMax systems, and other commercial RF devices.
In the months to come, the company’s focus shall shift towards producing the GaN FET-on-Diamond wafer products en masse. Additionally, further work shall continue to develop thicker and wider-diameter GaN FET-on-Diamond wafers, along with GaN FET epitaxy designed for higher power X-band radar applications.
Warm Regards,
Felix Ejeckam
CEO |
