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Technical details
Features
- Atomically-attached GaN-on-Diamond
- Freestanding CVD diamond
- Excellent thermal properties
- Available in 2" and 10x10mm² pieces
- Available in Ga- and N-facing surfaces
Applications
- Ideal for III-Nitrides re-growth
- Ultra-high temperature devices
- Ideal for HEMTs, FETs,
UV/Blue/Green Laser Diodes,
UV/Blue/Green/White LEDs,
RF-Circuits, MMICs, etc.
* PDF downloads
** PPT downloads
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Papers
- Analysis of GaN before- and after-diamond*, published in the 2008 proceedings of the Advanced Technology Workshop on Advanced Substrates and Next Generation Semiconductors. The Workshop is part of the IMAPS (International Microelectronics and Packaging Society). Meeting is held at Linthicum Heights, MD 21090, April 30–May 1, 2008.
- More process-able GaN-on-Diamond wafers*, published in Conference Digest of Papers; CS ManTech Conference, 2008. Meeting is held in Chicago, IL, April 14-17, 2008.
- Cornell demos high-power GaN-on-Diamond FET* (PowerPoint version: Group4 models practical GaN-on-Diamond simulations**), published by Cornell University Professor Lester F. Eastman in IEEE Electron Device Letters, 2007.
- AlGaN HEMTs on Diamond Substrate*, published by industrial partners at Devices Research Conference, University of Notre Dame, South Bend, Indiana, Jun. 18-20, 2007.
- Comparison of GaN HEMTs on Diamond and SiC Substrates*, published by Cornell University Professor Lester F. Eastman at WOCSDICE 2007, Venice, Italy, May 20-23, 2007.
- GaN HEMT-on-Diamond Substrates for X-Band applications*, published in Conference Digest of Papers, CS ManTech Conference, 2007.
- The 1st GaN-on-Diamond transistor by Air Force and EMCORE*, published in CSICS symposium proceedings, San Antonio, TX, Nov. 2006.
- The technology of GaN-on-Diamond**
Keys Conference, San Antonio, TX, Nov. 2006.
- GaN-on-Diamond: Why… & How…**
DARPA Threads Workshop, Santa Barbara, CA, Nov. 2006.
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