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Epitaxial Wafers | Custom Materials | Upcoming Products
Epitaxial Wafers
These are epitaxial GaN layers atomically attached to low-cost chemical-vapor-deposited (CVD) polycrystalline diamond substrates.
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White Papers
Technical Talks and Publications
View all technical talks and publications >
* PDF downloads
** PPT downloads
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Features
- GaN HEMT Epitaxy atomically attached to Diamond HEMT substrates.
- Available in 1”, 2”, 3”, soon-to-be 4” diameters
- Diamond is nominally 100-microns thick
- Irregular shapes also available
- GaN-on-Diamond Wafers may be shipped free-standing, or mounted on a carrier
- May use own, or customer-supplied GaN Epitaxy to form GaN-on-Diamond wafers
Applications
- RF Power Amplifiers (e.g. S-, C-, X-, K-, and W-bands)
- MMICs
o Discrete FETs
- Power Switches
- Power Diodes
- Very high-power, or high-voltage FETs
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