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GaN FETs and HEMTs –on–Diamond
We are nearing completion in the development of a GaN FET-on-Diamond epitaxial wafer product. To be contrasted from single-layer template wafers we presently offer, this new product will ship with transistor epitaxy already layered on top of the GaN-on-Diamond wafer. The wafers will be ready for device fabrication by customers. Customers who desire a custom designed GaN epitaxial layer structure may simply inform our technical staff so that their specific structure is grown and attached to the diamond wafer.
3” and 4” Wafers
We are nearing completion in the development of 3” and 4” diameter wafers of GaN-on-diamond wafers. Upon our announcement of this capability, all of our shipped wafers including single-layer templates, and transistor epitaxial wafers shall be made available at 3” and 4”. While these wafers shall be at the very leading edge of wafer diameter in the GaN community, we will continue to offer smaller sized wafers that meet particular customer needs.
Further inquiries may be directed to: technology@Group4Labs.com
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