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Papers
Technical Talks and Publications
2012
- 100,000 Device-hours Operation of AlGaN/GaN HEMTs on Diamond with T
 ≥ 200°C*; Dubravko I. Babić, Quentin Diduck, Chandashekar Khandavalli, Daniel Francis,
Firooz N. Faili, and Felix Ejeckam, IEEE Transactions on Reliability.
- Thermal Characterization of GaN-on-Diamond Substrates for HEMT Applications*; Jungwan Cho, Zijian Li, Elah Bozorg-Grayeli, Mehdi Asheghi, Kenneth E. Goodson (Department of Mechanical Engineering, Stanford University), Daniel Francis, Felix Ejeckam, Firooz Faili (Group4 Labs); ITherm Conference 2012, San Diego, California, USA, May 30 - June 1, 2012.
- Comparison of GaN-on-Diamond with GaN-on-SiC HEMT and MMIC Performance*; M. Tyhach, S. Bernstein, P. Saledas, (Raytheon Company), and F. Ejeckam, D. Babić, F. Faili, and D. Francis (Group4 Labs); Conference Digest of Papers; CS ManTech Conference, April 23-26, 2012, The Boston Park Plaza Hotel, Boston, MA.
- Recent Advancements in GaN-on-Diamond Wafer Development***, D. Francis, Q. Diduck, K. Matthews, J. Smart, F. Lowe, Firooz Faili, Dubravko Babic, and F. Ejeckam (Group4 Labs); 37th Annual GOMACTech Conference MARCH 19-22, 2012, Las Vegas, NV.
- Improved thermal Characterization of Composite GaN Substrates for HEMT Applications***; Jungwan Cho, Zijian Li, Elah Bozorg-Grayeli, Takashi Kodama, Mehdi Asheghi, Kenneth E. Goodson (Department of Mechanical Engineering, Stanford University), David H. Altman (Raytheon Company), Daniel Francis, Felix Ejeckam, Firooz Faili (Group4 Labs); 37th Annual GOMACTech Conference MARCH 19-22, 2012, Las Vegas, NV.
- Recent Advances in GaN-on-Diamond HEMTs***; D. Francis, K.D. Matthews, F. Lowe, Q. Diduck, D. Babić, S. Zaitsev, F. Faili, C. Khandavalli, J. Smart, and F. Ejeckam; 37th Annual GOMACTech Conference MARCH 19-22, 2012, Las Vegas, NV.
- Near-Junction Thermal Management in High Power GaN HEMTs***; Deep C. Dumka, Uttiya Chowdhury, Jose L. Jimenez, Tso-Min Chou, Andrew Ketterson, David M. Fanning, Bruce Murdock (TriQuint Semiconductor), and Daniel Francis, Firooz Faili, and Felix Ejeckam (Group4 Labs); 37th Annual GOMACTech Conference MARCH 19-22, 2012, Las Vegas, NV.
- Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier-Series Expansion*, submitted to 'Special Issue on High Heat Cooling in Electronics / J. Heat Transfer' by Dubravko Babić.
- GaN-on-Diamond Transistors** by Quentin Diduck, Dubravko Babić, Firooz Faili, Daniel Francis, and Felix Ejeckam,
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) February 19-22, 2012, Napa Valley, CA.
2011
- Laser machining of GaN-on-diamond wafers*, Dubravko I. Babić, Quentin Diduck, Firooz Faili, John Wasserbauer, Frank Lowe, Daniel Francis, Felix Ejeckam; Diamond & Related Materials 20, May-June 2011, 675–681.
- Development of III-Nitride HEMTs on CVD Diamond Substrates**, Abstract*, Paper*, Firooz Faili, Quentin Diduck, Dubravko Babić, Daniel Francis, Felix Ejeckam, J.D. Blevins; presented at MANTECH, May 16-19, 2011.
- GaN on Diamond HEMT Devices**, Quentin Diduck, Dubravko Babić, William Schaff, and Lester F. Eastman; presented at
WOCSEMMAD, February 2011.
2010
- Novel High Temperature Annealed Schottky Metal for GaN Devices*, Quentin Diduck, Ian Walsh, Dubravko Babić, Lester F. Eastman; International Journal of High Speed Electronics and Systems, Vol. XX, No. X, 2010, 1-6.
- GaN-on-diamond Field Effect Transistors: From Wafers to Amplifier Modules*, Dubravko Babić, Quentin Diduck, Prasad Yenigalla, Alex Schreiber, Daniel Francis, Firooz Faili, Felix Ejeckam, Group4 Labs, Inc; J. G. Felbinger, and L. F. Eastman, Cornell University; presented at MIPRO/MEET International Conference in Croatia, May 2010.
This paper has received the MIPRO award for "exceptional outstanding paper".
- Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond
Substrates*, Kelson D. Chabak, James K. Gillespie, Virginia Miller, Antonio
Crespo, Jason Roussos, Manuel Trejo, Dennis E. Walker, Jr., Glen D. Via, and
Gregg H. Jessen, Air Force Research Labs; John Wasserbauer, Firooz Faili,
Dubravko I. Babić, Daniel Francis, and Felix Ejeckam, Group4 Labs, Inc. IEEE
Electron Device Letters, Vol. 31, No. 2, February 2010, Page 99.
2009
- Frequency performance enhancement of AlGaN/GaN HEMTs on diamond*, J.G. Felbinger and L.F. Eastman, Cornell University; Q. Diduck, J. Wasserbauer, F. Faili, D.I. Babić, D. Francis, and F. Ejeckam, Group4 Labs, Inc., Recently accepted for publication, Electronic Letters, 2009.
- AlGaN/GaN-on-Diamond HEMT Recent Progress*, J.G. Felbinger and L.F. Eastman, Cornell University; J. Wasserbauer, F. Faili, D.I. Babić, D. Francis, and F. Ejeckam, Group4 Labs, Inc., WOCSDICE 2009 Presentation.
- AlGaN/GaN-on-Diamond HEMT Recent Progress*, J.G. Felbinger and L.F. Eastman, Cornell University; J. Wasserbauer, F. Faili, D.I. Babić, D. Francis, and F. Ejeckam, Group4 Labs, Inc., WOCSDICE 2009 Short Abstract.
- Formation and Characterization of 4-INCH GaN HEMT-on-Diamond Substrates*, D. Francis, F. Faili, D. Babić, F. Ejeckam, A Nurmikko and H. Maris. Diamond and Related Materials, Volume 19, Issues 2-3, February-March 2010, Pages 229-233
- Recent Device Progress: GaN-on-Diamond vs. GaN-on-Silicon & GaN-on-SiC*, WOCSEMMAD 2009 Conference (Worskhop on Compound Semiconductor Materials and Devices), Ft. Myers, FL, February 15-18, 2009.
2008
- GaN-on-Diamond HEMTs – A comprehensive 2008 review*, J.G. Felbinger and L.F. Eastman, Cornell University; J. Wasserbauer, F. Faili, D.I. Babić, D. Francis, and F. Ejeckam, Group4 Labs, Inc., WOCSEMMAD 2008.
- Analysis of GaN before- and after-diamond*, published in the 2008 proceedings of the Advanced Technology Workshop on Advanced Substrates and Next Generation Semiconductors. The Workshop is part of the IMAPS (International Microelectronics and Packaging Society). Meeting is held at Linthicum Heights, MD 21090, April 30–May 1, 2008.
- More process-able GaN-on-Diamond wafers*, published in Conference Digest of Papers; CS ManTech Conference, 2008. Meeting is held in Chicago, IL, April 14-17, 2008.
2007
- Comparison of GaN HEMTs on Diamond and SiC Substrates*, Jonathan G. Felbinger, M. V. S. Chandra, Yunju Sun, Lester F. Eastman, John Wasserbauer, Firooz Faili, Dubravko Babić, Francis, and Felix Ejeckam, Cornell University, Group4 Labs, Inc. IEEE Electron Device Letters, Vol. 28, No. 11, November 2007, pages 948-950.
- Cornell demo of 3-W/mm FET-on-Diamond* (PowerPoint version: Group4 models practical GaN-on-Diamond simulations**), published by Cornell University Professor Lester F. Eastman in IEEE Electron Device Letters, 2007.
- Industry demos GaN-on-Diamond FETs*, published by industrial partners at Devices Research Conference, University of Notre Dame, South Bend, Indiana, Jun. 18-20, 2007.
- Cornell: GaN-on-Diamond vs. GaN–on-SiC*, published by Cornell University Professor Lester F. Eastman at WOCSDICE 2007, Venice, Italy, May 20-23, 2007.
- GaN HEMT-on-Diamond Substrates for X-Band applications*, published in Conference Digest of Papers, CS ManTech Conference, 2007.
2006
- The 1st GaN-on-Diamond transistor by Air Force and EMCORE*, published in CSICS symposium proceedings, San Antonio, TX, Nov. 2006.
- The technology of GaN-on-Diamond**
Keys Conference, San Antonio, TX, Nov. 2006.
- GaN-on-Diamond: Why… & How…**
DARPA Threads Workshop, Santa Barbara, CA, Nov. 2006.
White Papers
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*** This paper will be available after the publication date.
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