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Papers

White Papers

• Specification sheet (2” GaN-on-Diamond HEMT Epi-Wafer (2011)*) – describes technical details of the GaN-on-Diamond wafer products as shipped by Group4 Labs.
• Processing a GaN-on-Diamond wafer* – describes how the wafers might be handled for conventional semiconductor processing.
• Practical simulations of GaN-on-Diamond**, Simulations & modeling*, Power density & thermal simulations* – describes simulated and modeled data that describes the potential impact of GaN-on-Diamond wafers on electronic devices.
• Materials properties* – describes the electronic, optical, thermal, and materials properties of various materials similar to/or related to GaN and diamond.
• Reliability & qualification data* – describes the body of reliability and qualification data assembled about GaN-on-Diamond epi-wafers.
  
  

Technical Talks and Publications

2011

• Development of III-Nitride HEMTs on CVD Diamond Substrates**, Extended abstract*, Firooz Faili, Quentin Diduck, Dubravko Babic, Daniel Francis, Felix Ejeckam, J.D. Blevins; presented at MANTECH, May 2011.
• GaN on Diamond HEMT Devices**, Quentin Diduck, Dubravko Babic, William Schaff, and Lester F. Eastman; presented at WOCSEMMAD, February 2011.
  

2010

• GaN-on-diamond Field Effect Transistors: From Wafers to Amplifier Modules*, Dubravko Babic, Quentin Diduck, Prasad Yenigalla, Alex Schreiber, Daniel Francis, Firooz Faili, Felix Ejeckam, Group4 Labs, Inc; J. G. Felbinger, and L. F. Eastman, Cornell University; presented at MIPRO/MEET International Conference in Croatia, May 2010.
  This paper has received the MIPRO award for "exceptional outstanding paper".
• Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond
  Substrates*, Kelson D. Chabak, James K. Gillespie, Virginia Miller, Antonio
  Crespo, Jason Roussos, Manuel Trejo, Dennis E. Walker, Jr., Glen D. Via, and
  Gregg H. Jessen, Air Force Research Labs; John Wasserbauer, Firooz Faili,
  Dubravko I. Babic, Daniel Francis, and Felix Ejeckam, Group4 Labs, Inc. IEEE
  Electron Device Letters, Vol. 31, No. 2, February 2010, Page 99.

2009

• Frequency performance enhancement of AlGaN/GaN HEMTs on diamond*, J.G. Felbinger and L.F. Eastman, Cornell University; Q. Diduck, J. Wasserbauer, F. Faili, D.I. Babic, D. Francis, and F. Ejeckam, Group4 Labs, Inc., Recently accepted for publication, Electronic Letters, 2009.
• AlGaN/GaN-on-Diamond HEMT Recent Progress*, J.G. Felbinger and L.F. Eastman, Cornell University; J. Wasserbauer, F. Faili, D.I. Babic, D. Francis, and F. Ejeckam, Group4 Labs, Inc., WOCSDICE 2009 Presentation.
• AlGaN/GaN-on-Diamond HEMT Recent Progress*, J.G. Felbinger and L.F. Eastman, Cornell University; J. Wasserbauer, F. Faili, D.I. Babic, D. Francis, and F. Ejeckam, Group4 Labs, Inc., WOCSDICE 2009 Short Abstract.
• Formation and Characterization of 4-INCH GaN HEMT-on-Diamond Substrates*, D. Francis, F. Faili, D. Babic, F. Ejeckam, A Nurmikko and H. Maris. Diamond and Related Materials, Volume 19, Issues 2-3, February-March 2010, Pages 229-233
• Recent Device Progress: GaN-on-Diamond vs. GaN-on-Silicon & GaN-on-SiC*, WOCSEMMAD 2009 Conference (Worskhop on Compound Semiconductor Materials and Devices), Ft. Myers, FL, February 15-18, 2009.

2008

• GaN-on-Diamond HEMTs – A comprehensive 2008 review*, J.G. Felbinger and L.F. Eastman, Cornell University; J. Wasserbauer, F. Faili, D.I. Babic, D. Francis, and F. Ejeckam, Group4 Labs, Inc., WOCSEMMAD 2008.
• Analysis of GaN before- and after-diamond*, published in the 2008 proceedings of the Advanced Technology Workshop on Advanced Substrates and Next Generation Semiconductors. The Workshop is part of the IMAPS (International Microelectronics and Packaging Society). Meeting is held at Linthicum Heights, MD 21090, April 30–May 1, 2008.
• More process-able GaN-on-Diamond wafers*, published in Conference Digest of Papers; CS ManTech Conference, 2008. Meeting is held in Chicago, IL, April 14-17, 2008.
  
  

2007

• Comparison of GaN HEMTs on Diamond and SiC Substrates*, Jonathan G. Felbinger, M. V. S. Chandra, Yunju Sun, Lester F. Eastman, John Wasserbauer, Firooz Faili, Dubravko Babic, Francis, and Felix Ejeckam, Cornell University, Group4 Labs, Inc. IEEE Electron Device Letters, Vol. 28, No. 11, November 2007, pages 948-950.
• Cornell demo of 3-W/mm FET-on-Diamond* (PowerPoint version: Group4 models practical GaN-on-Diamond simulations**), published by Cornell University Professor Lester F. Eastman in IEEE Electron Device Letters, 2007.
• Industry demos GaN-on-Diamond FETs*, published by industrial partners at Devices Research Conference, University of Notre Dame, South Bend, Indiana, Jun. 18-20, 2007.
• Cornell: GaN-on-Diamond vs. GaN–on-SiC*, published by Cornell University Professor Lester F. Eastman at WOCSDICE 2007, Venice, Italy, May 20-23, 2007.
• GaN HEMT-on-Diamond Substrates for X-Band applications*, published in Conference Digest of Papers, CS ManTech Conference, 2007.
  
  

2006

• The 1st GaN-on-Diamond transistor by Air Force and EMCORE*, published in CSICS symposium proceedings, San Antonio, TX, Nov. 2006.
• The technology of GaN-on-Diamond**
  Keys Conference, San Antonio, TX, Nov. 2006.
• GaN-on-Diamond: Why… & How…**
  DARPA Threads Workshop, Santa Barbara, CA, Nov. 2006.

* PDF downloads
** PPT downloads

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